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parameter max. units v r d.c. reverse voltage 600 v i f @ t c = 100c continuous forward current 22 i fsm @ t c = 25c single pulse forward current 225 p d @ t c = 25c maximum power dissipation 83 w t j operating junction and -55 to +150 c t stg storage temperature range ? reduced rfi and emi ? reduced snubbing ? extensive characterization of recovery parameters ? hermetic ? electrically isolated ? ceramic eyelets features description hexfred tm diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. an extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ultrafast, soft recovery diode hexfred tm v r = 600v v f = 1.75v q rr = 290nc di (rec)m /dt = 400a/s absolute maximum ratings note: d.c. = 50% rect. wave 1/2 sine wave, 60 hz , p.w. = 8.33 ms hfa35hb60 03/04/13 www.irf.com 1 case style to-254aa anode cathode (isolated base)
hfa35hb60 2 www.irf.com parameter min. typ. max. units test conditions v br cathode anode breakdown voltage 600 ? ? v i r = 100a v fm max forward voltage ? ? 1.75 i f = 22a ? ? 2.25 v i f = 45a see fig. 1 ? ? 1.64 i f = 22a, t j = 125c i rm max reverse leakage current ? ? 10 a v r = v r rated ? ? 1.0 ma t j = 125c, v r = 480v c t junction capacitance ? 56 59 pf v r = 200v see fig. 3 l s series inductance ? 8.7 ? nh measured from center of bond pad to end of anode bonding wire electrical characteristics @ t j = 25c (unless otherwise specified) dynamic recovery characteristics @ t j = 25c (unless otherwise specified)
parameter min. typ. max. units test conditions t rr1 reverse recovery time ? 60 97 ns t j = 25c see fig. t rr2 ? 110 165 t j = 125c 5 i f = 22a i rrm1 peak recovery current ? 5.2 7.8 t j = 25c see fig. i rrm2 ? 8.5 13 t j = 125c 6 v r = 200v q rr1 reverse recovery charge ? 190 290 t j = 25c see fig. q rr2 ? 560 840 t j = 125c 7 di f /dt = 200a/s di (rec)m /dt1 peak rate of fall of recovery current ? 270 400 t j = 25c see fig. di (rec)m /dt2 during t b ? 170 250 t j = 125c 8 thermal - mechanical characteristics parameter typ. max. units r jc junction-to-case, single leg conducting ? 1.5 wt weight 9.3 ? g
hfa35hb60 www.irf.com 3 fig. 4 - maximum thermal impedance z thjc characteristics fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 1 - maximum forward voltage drop vs. instantaneous forward current 0.0001 0.001 0.01 0.1 1 10 100 1000 0 200 400 600 r r reverse voltage - v (v) t = 150c reverse current - i (a) t = 125c j j t = 25c t = -55c j j 10 100 1000 1 10 100 1000 t = 25c j reverse voltage - v (v) r t junction capacitance - c (pf) a 1 10 100 0.0 1.0 2.0 3.0 4.0 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
hfa35hb60 4 www.irf.com fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt fig. 5 - typical reverse recovery vs. di f /dt fig. 6 - typical recovery current vs. di f /dt 0 30 60 90 120 150 100 1000 f di /dt - (a/s) i = 44a f i = 22a f i = 11a f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - (a/s) i = 44a f i = 22a f i = 11a f v = 200v t = 125c t = 25c r j j 0 400 800 1200 1600 2000 100 1000 f di /dt - (a/s) i = 44a i = 22a i = 11a f f f v = 200v t = 125c t = 25c r j j 100 1000 10000 100 1000 f di /dt - (a/s) i = 11a f i = 22a f i = 44a f v = 200v t = 125c t = 25c r j j
hfa35hb60 www.irf.com 5

fig. 10 - reverse recovery waveform and definitions fig. 9 - reverse recovery parameter test circuit t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f
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reverse recovery circuit irfp250 d.u.t. l = 70h v = 200v r 0.01 ? g d s dif/dt adjust
hfa35hb60 6 www.irf.com case outline and dimensions ? to-254aa 3.81 [.150] 0.12 [.005] 1.27 [.050] 1.02 [.040] 6.60 [.260] 6.32 [.249] c 14.48 [.570] 12.95 [.510] 3x 0.36 [.014] b a 1.14 [.045] 0.89 [.035] 2x 3.81 [.150] 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 17.40 [.685] 16.89 [.665] a 123 13.84 [.545] 13.59 [.535] 0.84 [.033] max . b not es : 1. dimens ioning & t olerancing per as me y14.5m-1994. 2. all dimensions are shown in millimeters [inches]. 3. cont roll ing dimens ion: inch. 4. conforms to jedec outline to-254aa. 1 = cathode 2 = n/c 3 = anode pin assignments caution beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 03/2013

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